The research carried out in resistive switching memories has been focused on understanding the physical mechanism leading to electroforming and switching.
Our studies have shown that the nature of resistive switching is the dielectric breakdown induced by the formation of the conductive filamentary paths across the oxide. The switching between different resistance states reflects the formation/rupture of the conductive paths or filaments. The formation of paths is caused by a trap filling process. The rupture of the conductive path is due to a charge recombination that neutralizes the oxide defect. This process requires the existence of a bilayer structure.
As a major achievement we unravelled the physics of a slow switching transition responsible for a switching speed limitation in non-volatile memories. This phenomenon had remained unsolved since the 60's.
Recent publications in Non-Volatile Memories
Memristor and Memristive Neural Networks, ISBN: 978-953-51-5481-5. Edited by Alex Pappachen James.
Henrique L. Gomes, Dago .M. de Leeuw, Stefan C.J. Meskers , " Resistive switching in metal oxide/organic semiconductor non-volatile memories ", InTech (open acess) (to apper in December 2017).
Josť Rosa, et al. "Memristors Using Solution-Based IGZO Nanoparticles", ACS Omega (2017)
Benjamin F Bory, et al. "Unipolar resistive switching in metal oxide/organic semiconductor non-volatile memories as a critical phenomenon", Journal of Applied Physics, 118, 205503 (2015)